Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Robert Coffie0
Chang Soo Suh0
Ilan Ben-Yaacov0
Umesh Mishra0
Date of Patent
December 14, 2010
Patent Application Number
12324574
Date Filed
November 26, 2008
Patent Citations Received
Patent Primary Examiner
Patent abstract
Enhancement-mode III-nitride transistors are described that have a large source to drain barrier in the off state, low off state leakage, and low channel resistance in the access regions are described. The devices can include a charge depleting layer under the gate and/or a charge enhancing layer outside of the gate region, that is, in the access region.
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