Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Marc Alberti0
Eric Mayer0
Date of Patent
December 14, 2010
Patent Application Number
11763081
Date Filed
June 14, 2007
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of forming an ohmic layer for a semiconductor device includes forming a metal layer on a Silicon Carbide (SiC) layer and forming an ablation capping layer on the metal layer. Laser light is impinged through the ablation capping layer to form a metal-SiC material.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
