Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yutaka Hirose0
Kaoru Inoue0
Yoshito Ikeda0
Date of Patent
December 7, 2010
0Patent Application Number
119847230
Date Filed
November 21, 2007
0Patent Primary Examiner
Patent abstract
A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Group III nitride semiconductor layer and the gate electrode.
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