Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
December 7, 2010
Patent Application Number
12250405
Date Filed
October 13, 2008
Patent Primary Examiner
Patent abstract
Semiconductor lasers, such as VCSELs having active regions with flattening layers associated with nitrogen-containing quantum wells are disclosed. MEE (Migration Enhanced Epitaxy) is used to form a flattening layer upon which a quantum well is formed and thereby enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. A cap layer is also formed over the quantum well.
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