Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takeyoshi Masuda0
Date of Patent
December 7, 2010
0Patent Application Number
116643180
Date Filed
March 2, 2006
0Patent Primary Examiner
Patent abstract
A surface reconstruction method for a silicon carbide substrate includes a silicon film forming step of forming a silicon film on a surface of the silicon carbide substrate and a heat treatment step of heat-treating the silicon carbide substrate and the silicon film without providing a polycrystalline silicon carbide substrate on a surface of the silicon film. Here, after the heat treatment step, a silicon film removal step of removing the silicon film may be included. Further, a silicon oxide film forming step of oxidizing the silicon film after the heat treatment step to generate a silicon oxide film, and a silicon oxide film removal step of removing the silicon oxide film may be included.
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