Patent attributes
A transistor includes a control electrode, a first current electrode and a second current electrode. The control electrode includes a body portion, and first and second hand portions protruded from first and second ends of the body portion, respectively. The first current electrode is electrically insulated from the control electrode and disposed over a region between the first and second hand portions of the control electrode. A portion of the first current electrode is overlapped with a portion of the control electrode. The second current electrode is electrically insulated from the control electrode and partially overlapped with the body portion, the first hand portion and the second hand portion of the control electrode. Therefore, parasitic capacitance is reduced.
