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US Patent 7839509 Method of measuring deep trenches with model-based optical spectroscopy

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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
7839509
Date of Patent
November 23, 2010
Patent Application Number
11994763
Date Filed
June 30, 2006
Patent Primary Examiner
‌
Tarifur Chowdhury
Patent abstract

The invention represents an improved method of measuring trenches on semiconductor wafers with optical spectroscopy. According to the described method, it is possible to characterize not only depth but also shape of the trench. The advancement is achieved by improved Effective Medium Approximation-based modeling of the optical response of trench structures.

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