Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 23, 2010
Patent Application Number
12444140
Date Filed
October 3, 2007
Patent Primary Examiner
Patent abstract
A tunnel transistor includes source diffusion (4) of opposite conductivity type to a drain diffusion (6) so that a depletion layer is formed between source and drain diffusions in a lower doped region (8). An insulated gate (16) controls the position and thickness of the depletion layer. The device includes a quantum well formed in accumulation layer (20) which is made of a different material to the lower layer (2) and cap layer (22).
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