US Patent 7834343 Nitride semiconductor and method for manufacturing thereof
Patent 7834343 was granted and assigned to LG on November, 2010 by the United States Patent and Trademark Office.
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Patent abstract
A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride layer is a P-type nitride layer with the group 4 element doped.
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Patent Inventor Names
Sung Chul Choi0
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US Patent 07834343 Nitride semiconductor and method for manufacturing thereof US Patent 7834343 Nitride semiconductor and method for manufacturing thereof
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Patent Number
078343430
Patent Number
78343430
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Official Website
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Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
078343430
Date of Patent
November 16, 2010
0Patent Application Number
115429400
Date Filed
October 5, 2006
0Official Website
Patent Primary Examiner
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US Patent 07834343 Nitride semiconductor and method for manufacturing thereof
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07834343
Date of patent
November 16, 2010
Patent application number
11542940
Date Filed
October 5, 2006
Patent primary examiner
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