Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kyung-In Choi0
Sang-Woo Lee0
Sang-Bom Kang0
You-Kyoung Lee0
Seong-Geon Park0
Gil-Heyun Choi0
Jong-Myeong Lee0
Date of Patent
November 16, 2010
Patent Application Number
11474544
Date Filed
June 26, 2006
Patent Primary Examiner
Patent abstract
In a method for forming a field effect transistor, a metal nitride layer is formed on a gate electrode insulating layer. Tantalum amine derivatives represented by the chemical formula Ta(NR1)(NR2R3)3, in which R1, R2 and R3 represent H or a C1-C6 alkyl group, may be used to form the metal nitride layer. Nitrogen may then be implanted into the metal nitride layer to increase the nitrogen content of the layer.
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