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US Patent 7830016 Seed layer for reduced resistance tungsten film

Patent 7830016 was granted and assigned to Intel on November, 2010 by the United States Patent and Trademark Office.

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Patent Citations Received
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US Patent 12113019 Memory devices including strings of memory cells, and related electronic systems
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edited on 31 Oct, 2023
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Patent abstract

Briefly, a memory device comprising a beta phase tungsten seed layer is disclosed.

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edited on 19 Oct, 2023
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Patent Citations Received
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US Patent 11791268 Tungsten structures and methods of forming the structures
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Patent Inventor Names
Alain P. Blosse0
Allen Mcteer0
Mark Meldrim0
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Patent Citations Received
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US Patent 11715692 Microelectronic devices including conductive rails, and related methods
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US Patent 07830016 Seed layer for reduced resistance tungsten film US Patent 7830016 Seed layer for reduced resistance tungsten film

Infobox
Patent Number
078300160
Patent Number
78300160
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=078300160
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Infobox
Is a
Patent
Patent
0
Current Assignee
Intel
Intel
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
078300160
Date of Patent
November 9, 2010
0
Patent Application Number
121651760
Date Filed
June 30, 2008
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=078300160
Patent Primary Examiner
‌
Thao P. Le
0
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edited on 3 Jun, 2022
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=07830016
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 US Patent 07830016 Seed layer for reduced resistance tungsten film

Infobox
Is a
Patent
Patent
Current assignee
Intel
Intel
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07830016
Date of patent
November 9, 2010
Patent application number
12165176
Date Filed
June 30, 2008
Patent primary examiner
‌
Thao P. Le

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