Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sung Kee Han0
Ha Jin Lim0
Hyung Suk Jung0
Jong-Ho Lee0
Date of Patent
November 9, 2010
0Patent Application Number
119666400
Date Filed
December 28, 2007
0Patent Primary Examiner
Patent abstract
A semiconductor device includes a semiconductor substrate including an NMOS region and a PMOS region, a gate insulating layer formed on the semiconductor substrate, an NMOS gate formed on the gate insulating layer of the NMOS region, and a PMOS gate formed on the gate insulating layer of the PMOS region. Any one of the NMOS gate and the PMOS gate includes a one-layered conductive layer pattern, and another of the NMOS gate and the PMOS gate includes a three-layered conductive layer pattern.
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