Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
November 9, 2010
Patent Application Number
12308249
Date Filed
January 14, 2008
Patent Citations Received
Patent Primary Examiner
Patent abstract
The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.
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