US Patent 7829409 Method of manufacturing silicon topological capacitors
Patent 7829409 was granted and assigned to University of South Florida on November, 2010 by the United States Patent and Trademark Office.
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Patent abstract
In accordance with the present invention, a novel method to fabricate topological capacitors is provided. The fabrication method of the instant invention is based upon a reversed surface topology utilizing deep reactive ion etching to establish conductive capacitive elements and non-conductive capacitive element groups.
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Patent Inventor Names
Lawrence C. Langebrake0
Shinzo Onishi0
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US Patent 07829409 Method of manufacturing silicon topological capacitors US Patent 7829409 Method of manufacturing silicon topological capacitors
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Patent Number
078294090
Patent Number
78294090
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Official Website
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
078294090
Date of Patent
November 9, 2010
0Patent Application Number
116795800
Date Filed
February 27, 2007
0Official Website
Patent Primary Examiner
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US Patent 07829409 Method of manufacturing silicon topological capacitors
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07829409
Date of patent
November 9, 2010
Patent application number
11679580
Date Filed
February 27, 2007
Patent primary examiner
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