Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Xiaobin Wang0
Xiaohua Lou0
Yuankai Zheng0
Dexin Wang0
Dimitar V. Dimitrov0
Wei Tian0
Date of Patent
November 2, 2010
0Patent Application Number
122398820
Date Filed
September 29, 2008
0Patent Primary Examiner
Patent abstract
Spin-transfer torque memory having a compensation element is disclosed. The spin-transfer torque memory unit includes a synthetic antiferromagnetic reference element, a synthetic antiferromagnetic compensation element, a free magnetic layer between the synthetic antiferromagnetic reference element and the synthetic antiferromagnetic compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the synthetic antiferromagnetic reference element. The free magnetic layer has a saturation moment value greater than 1100 emu/cc.
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