Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Eio Onodera0
Hiroyasu Ishida0
Yasunari Noguchi0
Date of Patent
November 2, 2010
Patent Application Number
11860206
Date Filed
September 24, 2007
Patent Primary Examiner
Patent abstract
Channel regions continuous with transistor cells are disposed also below a gate pad electrode. The channel region below the gate pad electrode is fixed to a source potential. Thus, a predetermined reverse breakdown voltage between a drain and a source is secured without forming a p+ type impurity region below the entire lower surface of the gate pad electrode. Furthermore, a protection diode is formed in a conductive layer disposed at the outer periphery of an operation region.
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