Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
November 2, 2010
Patent Application Number
11559557
Date Filed
November 14, 2006
Patent Primary Examiner
Patent abstract
In a method for fabricating a semiconductor element in a substrate, micro-cavities are formed in the substrate. Furthermore, doping atoms are implanted into the substrate, whereby crystal defects are produced in the substrate. The substrate is heated, so that at least some of the crystal defects are eliminated using the micro-cavities, and the semiconductor element is formed using the doping atoms.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
