Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ru-Ying Tong0
Cheng T. Horng0
Date of Patent
October 5, 2010
0Patent Application Number
123199710
Date Filed
January 14, 2009
0Patent Primary Examiner
Patent abstract
An MTJ MRAM cell and its method of formation are described. The cell includes a composite free layer having the general form (Ni88Fe12)1-xCo100x—Ni92Fe8 with x between 0.05 and 0.1 that provides low magnetization and negative magnetostriction. The magnetostriction can be tuned to a low value by a multilayer capping layer that includes a positive magnetostriction layer of NiFeHf(15%). When this cell forms an MRAM array, it contributes to a TMR≧26%, a TMR/Rp—cov≧15.5 and a high AQF (array quality factor) for write operations.
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