Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yiran Chen0
Hongyue Liu0
Xiaobin Wang0
Xuguang Wang0
Dimitar V. Dimitrov0
Date of Patent
September 28, 2010
Patent Application Number
12175724
Date Filed
July 18, 2008
Patent Primary Examiner
Patent abstract
A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.
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