A nonvolatile semiconductor memory device capable of preventing the disturb phenomenon that could become a serious problem as the nonvolatile memory having a virtual grounding bit line is miniaturized includes a program row voltage application circuit for applying a predetermined program row voltage to the selected word line in programming in the selected memory cell, a program column voltage application circuit for applying a ground voltage to one of a pair of selected bit lines and applying a predetermined program column voltage to the other of the selected bit lines in programming; and a counter voltage application circuit for applying a counter voltage of an intermediate voltage between the ground voltage and program column voltage, to an adjacent unselected bit line not connected to the selected memory cell in the first and second bit lines and adjacent to the selected bit line to which the program column voltage is applied.