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US Patent 7800312 Dual mode ion source for ion implantation

Patent 7800312 was granted and assigned to SemEquip on September, 2010 by the United States Patent and Trademark Office.

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Current Assignee
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SemEquip
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
78003120
Patent Inventor Names
Thomas Neil Horsky0
Date of Patent
September 21, 2010
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Patent Application Number
115279940
Date Filed
September 26, 2006
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Patent Primary Examiner
Douglas W Owens
Douglas W Owens
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Patent abstract

A direct electron impact ion source is disclosed that includes a vaporizer for producing a process gas; an electron source for generating an electron beam; and an ionization chamber. The electron source is located outside the ionization chamber. Aligned apertures are provided in opposing walls of the ionization chamber to allow an electron beam to pass through the ionization chamber. The process gas is directed into the ionization chamber and ionized and extracted from the ionization chamber by way of an extraction aperture. In one embodiment, the direct electron impact ion source is configured with a form factor to enable it to be retrofit into the volume of an existing ion source , for example, an arc discharge type ion source. Alternatively, the direct electron impact ion source may be used together with an arc discharge ion source to create a dual mode or universal ion source.

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