Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kuo-Dong Huang0
Jyi-Tsong Lin0
Kao-Cheng Lin0
Date of Patent
September 21, 2010
Patent Application Number
12255780
Date Filed
October 22, 2008
Patent Primary Examiner
Patent abstract
The present invention relates to a trench silicon-on-insulator (SOI) dynamic random access memory (DRAM) cell and a method for making the same. A source and a drain are utilized to each connect to one of two semiconductor conductive units on an external side of a main body having a plurality of semiconductor conductive units, and the semiconductor conductive units are utilized to accumulate electric charges generated from the drain so as to decrease a threshold voltage. In addition, the DRAM cell only uses one field effect transistor (FET) device (1T), has characteristics of the conventional 1T-DRAM, and has higher integration density. Moreover, the process of the invention is simple, so the production cost can be reduced.
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