Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toshihide Kikkawa0
Kenji Imanishi0
Date of Patent
September 14, 2010
Patent Application Number
12059708
Date Filed
March 31, 2008
Patent Primary Examiner
Patent abstract
A compound semiconductor device having a transistor structure, includes a substrate, a first layer formed on the substrate and comprising GaN, a second layer formed over the first layer and containing InN whose lattice constant is larger than the first layer, a third layer formed over the second layer and comprising GaN whose energy bandgap is smaller than the second layer, and a channel region layer formed on the third layer.
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