Patent attributes
Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.
