US Patent 7795133 Semiconductor device and method of manufacturing the same

By covering inner surfaces of a wiring groove 26c and a via hole 27a with a fourth insulation film 25 containing porogen during a manufacturing process of a semiconductor device, an increase in the relative permittivity of the fourth insulation film 25 that is a low-permittivity film on the inner surfaces of the wiring groove 26c and the via hole 27a can be suppressed in a manufacturing process of a semiconductor device such as a barrier metal sputtering process.