US Patent 7795120 Doping wide band gap semiconductors
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Patent abstract
A 13C diamond is doped by proton induced transmutation. P-type doping is achieved by the 13C(p,αγ)10B reaction. N-type doping is achieved by the 13C(p,γ)14N reaction. The transmutation reaction that occurs is determined by selection of proton beam energy. Stacks of junctions each calculated to be in the order of 10 nm thick have been achieved.
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US Patent 07795120 Doping wide band gap semiconductors US Patent 7795120 Doping wide band gap semiconductors
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Patent Number
0779512000
Patent Number
779512000
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Infobox
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Patent Jurisdiction
Patent Number
077951200
Date of Patent
September 14, 2010
0Patent Application Number
125606220
Date Filed
September 16, 2009
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
077951200
Date of Patent
September 14, 2010
0Patent Application Number
125606220
Date Filed
September 16, 2009
0Official Website
Patent Primary Examiner
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US Patent 07795120 Doping wide band gap semiconductors
Infobox
Is a
Patent jurisdiction
Patent number
07795120
Date of patent
September 14, 2010
Patent application number
12560622
Date Filed
September 16, 2009
Patent primary examiner
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