Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 7, 2010
Patent Application Number
11176173
Date Filed
July 7, 2005
Patent Primary Examiner
Patent abstract
Provides a field-enhanced programmable resistance memory cell. In an example embodiment, a resistor includes a resistance structure between a first electrode and a second electrode. The resistance structure includes an insulating dielectric material. The second electrode includes a protrusion extending into the resistance structure. The insulating dielectric material includes a material in which a confined conductive region with a programmable resistance is formable via a conditioning signal.
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