Patent attributes
A semiconductor light-emitting device (1) includes a semiconductor multilayer film (11), a base material (12) for supporting the semiconductor multilayer film (11), a first feed terminal (17a), and a second feed terminal (17b). A protruding portion (12c) is formed on the back surface (12b) of the base material (12) that is opposite to the principal surface (12a) facing the semiconductor multilayer film (11). The first and second feed terminals (17a, 17b) are formed in contact with at least one selected from the portions (12d) of the back surface (12b) other than the protruding portion (12c) and the sides (12e) of the base material (12). The end face (121c) of the protruding portion (12c) is insulated electrically from the first and second feed terminals (17a, 17b). With this configuration, the semiconductor light-emitting device can improve the heat dissipation and achieve high integration easily.
