Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
See jong Leem0
Date of Patent
August 17, 2010
Patent Application Number
11440021
Date Filed
May 25, 2006
Patent Primary Examiner
Patent abstract
A method of manufacturing a light emitting diode, wherein a laser lift-off (LLO) layer and an epi-layer are formed on a nitride semiconductor substrate, and the nitride semiconductor substrate is then separated through a laser lift-off process, thereby improving the characteristics of the epi-layer and enabling to fabricate a high-grade and high-efficiency light emitting diode. Further, the LLO layer thus prepared is removed using a laser beam so that the relatively expensive nitride semiconductor substrate can be re-used, thereby reducing manufacturing costs.
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