Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jae-Kwan Park0
Sung-Hyun Kwon0
Sang-Yong Park0
Jae-Hwang Sim0
Keon-Soo Kim0
Date of Patent
August 10, 2010
0Patent Application Number
120749920
Date Filed
March 7, 2008
0Patent Primary Examiner
Patent abstract
A method of forming a semiconductor device is provided. A plurality of first guide patterns are formed on a substrate. A mask layer is conformally formed on the substrate. Second guide patterns are formed in empty regions on respective sides of the first guide patterns. The mask layer is planarized and the first and second guide patterns are removed. The mask layer is etched by an anisotropic etching process.
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