Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
July 20, 2010
Patent Application Number
10991544
Date Filed
November 19, 2004
Patent Primary Examiner
Patent abstract
A method of forming a partially etched nitride-based compound semiconductor crystal layer includes the following steps. A non-crystal layer of a nitride-based compound semiconductor is formed. At least a part of the non-crystal layer is then etched to form a partially etched non-crystal layer before the partially etched non-crystal layer is crystallized to form a partially etched nitride-based compound semiconductor crystal layer.
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