Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 6, 2010
Patent Application Number
12167686
Date Filed
July 3, 2008
Patent Primary Examiner
Patent abstract
A vertical FET structure with nanowire forming the FET channels is disclosed. The nanowires are formed over a conductive silicide layer. The nanowires are gated by a surrounding gate. Top and bottom insulator plugs function as gate spacers and reduce the gate-source and gate-drain capacitance.
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