US Patent 7745296 Raised source and drain process with disposable spacers

A method for forming raised source and drain regions in a semiconductor manufacturing process employs double disposable spacers. A deposited oxide is provided between the first and second disposable spacers, and serves to protect the gate electrode, first disposable spacers and a cap layer during the dry etching of the larger, second disposable spacers. Mouse ears are thereby prevented, while the use of a second disposable spacer avoids shadow-effects during halo ion-implants.