Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 22, 2010
Patent Application Number
11761438
Date Filed
June 12, 2007
Patent Primary Examiner
Patent abstract
A fin-type field effect transistor (FinFET) has a fin having a center channel portion, end portions comprising source and drain regions, and channel extensions extending from sidewalls of the channel portion of the fin. The structure also includes a gate insulator covering the channel portion and the channel extensions, and a gate conductor on the gate insulator. The channel extensions increase capacitance of the channel portion of the fin.
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