Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ayanori Endo0
Ryo Hayashi0
Tatsuya Iwasaki0
Date of Patent
June 15, 2010
Patent Application Number
12167540
Date Filed
July 3, 2008
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
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