Patent attributes
A method for forming at least one quantum dot at at least one predetermined location on a substrate is disclosed. In one aspect, the method comprises providing a layer of semiconductor material on an insulating layer on the substrate. The layer of semiconductor material is patterned so as to provide at least one line of semiconductor material having a width (wL) and having a local width variation at at least one predetermined location where the at least one quantum dot has to be formed. The local width variation has an amplitude (A) of between about 20 nm and 35 nm higher than the width wL of the at least one line. The at least one line is patterned to form at least one quantum dot. A design for a lithographic mask for use with the method and a method for making such a design are also disclosed.
