Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kazuhiko Aida0
Junji Hirase0
Shinji Takeoka0
Naoki Kotani0
Akio Sebe0
Gen Okazaki0
Date of Patent
June 8, 2010
Patent Application Number
11525011
Date Filed
September 22, 2006
Patent Primary Examiner
Patent abstract
A MIS transistor includes a gate electrode portion, insulating sidewalls formed on side surfaces of the gate electrode portion, source/drain regions and a stress film formed so as to cover the gate electrode portion and the source/drain regions. A height of an upper surface of the gate electrode portion is smaller than a height of an upper edge of each of the insulating sidewalls. A thickness of first part of the stress film located on the gate electrode portion is larger than a thickness of second part of the stress film located on the source/drain regions.
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