Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 8, 2010
Patent Application Number
12344992
Date Filed
December 29, 2008
Patent Primary Examiner
Patent abstract
In accordance with an embodiment of the invention the method of manufacturing a semiconductor device is capable of forming a semiconductor substrate having an embossing structure. The method includes forming a layer having a plurality of hemispherical single crystal silicon elements, and forming one or more carbon nano tubes between adjacent hemispherical single crystal silicon elements, thereby, increasing a length of an effective channel of a transistor.
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