Patent attributes
A method of bonding aluminum (Al) electrodes formed on two semiconductor substrates at a low temperature that does not affect circuits formed on the two semiconductor substrates is provided. The method includes: (a) forming aluminum (Al) electrodes on the two semiconductor substrates, respectively, and depositing a metal alloy that comprises aluminum (Al) and copper (Cu) onto the aluminum (Al) electrodes; (b) arranging the aluminum (Al) electrodes of the two semiconductor substrates to face with each other; and (c) heating the aluminum (Al) electrodes at a temperature lower than the melting point of the deposited metal alloy, and applying a specific pressure onto the two semiconductor substrates. Accordingly, bonding can be carried out at a temperature lower than the melting point of an Al0.83Cu0.17 alloy without having an effect on circuits formed on two semiconductor substrates, and can be selectively carried out at regions where pressure is applied.
