US Patent 7728405 Carbon memory

An integrated circuit including a memory cell and methods of manufacturing the integrated circuit are described. The memory cell includes a resistive memory element including a top contact, a bottom contact, and a carbon storage layer disposed between the top contact and the bottom contact. The memory cell operates at a voltage in a range of approximately 0.5V to approximately 3V, and at a current in a range of approximately 1 μA to approximately 150 μA.