Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kenji Yoneda0
Kazuhiko Yamamoto0
Date of Patent
June 1, 2010
0Patent Application Number
123491920
Date Filed
January 6, 2009
0Patent Primary Examiner
Patent abstract
In formation of a gate insulating film made of a high dielectric constant metal silicate, atomic layer deposition (ALD) is performed by setting exposure time to a precursor containing a metal or the like to saturation time of a deposition rate by a surface adsorption reaction and by setting exposure time to an oxidizing agent to time required for a composition of a metal oxide film to reach 97% or more of a stoichiometric value.
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