US Patent 7723823 Buried asymmetric junction ESD protection device
Patent 7723823 was granted and assigned to Freescale Semiconductor on May, 2010 by the United States Patent and Trademark Office.
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An improved lateral bipolar electrostatic discharge (ESD) protection device (40) comprises a semiconductor (SC) substrate (42), an overlying epitaxial SC layer (44), emitter-collector regions (48, 50) laterally spaced apart by a first distance (52) in the SC layer, a base region (54) adjacent the emitter region (48) extending laterally toward and separated from the collector region (50) by a base-collector spacing (56) that is selected to set the desired trigger voltage Vt1. By providing a buried layer region (49) under the emitter region (48) Ohmically coupled thereto, but not providing a comparable buried layer region (51) under the collector region (50), an asymmetrical structure is obtained in which the DC trigger voltage (Vt1DC) and transient trigger voltage (Vt1TR) are closely matched so that |Vt1TR−Vt1DC|˜0. This close matching increases the design margin and provides a higher performance ESD device (40) that is less sensitive to process variations, thereby improving manufacturing yield and reducing cost.
US Patent 07723823 Buried asymmetric junction ESD protection device US Patent 7723823 Buried asymmetric junction ESD protection device
US Patent 07723823 Buried asymmetric junction ESD protection device
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