Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jae Woong Han0
Soo Han Kim0
Seong Suk Lee0
Jong Hak Won0
Date of Patent
May 18, 2010
0Patent Application Number
115250120
Date Filed
September 22, 2006
0Patent Primary Examiner
Patent abstract
A nitride semiconductor device is provided. In the device, first and second conductivity type nitride layers are formed. An active layer is formed between the first and second conductivity type nitride layers. The active layer includes at least one quantum barrier layer and at least one quantum well layer. Also, a current spreading layer is interposed between the first conductivity type nitride layer and the active layer. The current spreading layer has an In content greater than the quantum well layer of the active layer.
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