US Patent 7713864 Method of cleaning semiconductor substrate conductive layer surface
Patent 7713864 was granted and assigned to Tokyo Electron on May, 2010 by the United States Patent and Trademark Office.
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A method of cleaning a semiconductor substrate conductive layer surface that can remove a residual organic material and a natural oxide satisfactorily and does not adversely affect a k value without damaging the side-wall insulation film of a via hole. A semiconductor device, including insulation films formed on the surface of a conductive layer of a semiconductor substrate and a via hole formed in an insulation film to partly expose the conductive layer, is carried into a reaction vessel, plasma including hydrogen is generated in the reaction vessel to clean the surface of the conductive layer at the bottom of the via hole, a residual organic material is decomposed and removed by ashing, and a copper oxide film on the surface of the conductive layer is reduced to Cu.
US Patent 07713864 Method of cleaning semiconductor substrate conductive layer surface US Patent 7713864 Method of cleaning semiconductor substrate conductive layer surface
US Patent 07713864 Method of cleaning semiconductor substrate conductive layer surface
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