Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 4, 2010
Patent Application Number
12046881
Date Filed
March 12, 2008
Patent Primary Examiner
Patent abstract
A method for easily manufacturing a semiconductor device in which variation in thickness or disconnection of a source electrode or a drain electrode is prevented is proposed A semiconductor device includes a semiconductor layer formed over an insulating substrate; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; an opening which reaches the semiconductor layer and is formed at least in the first insulating layer and the second insulating layer; and a step portion formed at a side surface of the second insulating layer in the opening.
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