Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Rak-Hwan Kim0
Hyun-Young Kim0
Won-sik Shin0
Young-Joo Cho0
Date of Patent
May 4, 2010
0Patent Application Number
112548510
Date Filed
October 21, 2005
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A capacitor and method of manufacturing the same include an insulating interlayer, a lower electrode, a protection structure, a dielectric layer and an upper electrode. The insulating interlayer may include a conductive pattern formed on a substrate. The lower electrode may be electrically connected to the conductive pattern. The protection structure may be formed on an outer sidewall of the cylindrical lower electrode and on the insulating interlayer.
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