Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 20, 2010
Patent Application Number
11956904
Date Filed
December 14, 2007
Patent Primary Examiner
Patent abstract
A semiconductor substrate has a trench in a first main surface. An insulated gate field effect part includes a gate electrode formed in the first main surface. A potential fixing electrode fills the trench and has an expanding part expanding on the first main surface so that a width thereof is larger than the width of the trench. An emitter electrode is formed on the first main surface and insulated from the gate electrode electrically and connected to a whole upper surface of the expanding part of the potential fixing electrode. Thus, a semiconductor device capable of enhancing reliability in order to prevent an aluminum spike from generating and a manufacturing method thereof can be provided.
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