Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 20, 2010
Patent Application Number
11785623
Date Filed
April 19, 2007
Patent Primary Examiner
Patent abstract
A plurality of origin patterns (3) containing a metal catalyst are formed over a semiconductor substrate (1). Next, an insulating film (4) covering the origin patterns (3) is formed. Next, a trench allowing at the both ends thereof the side faces of the origin patterns (3) to expose is formed. Thereafter, a wiring is formed by allowing carbon nanotubes (5) having a conductive chirality to grow in the trench. Thereafter, an insulating film covering the carbon nanotubes (5) is formed.
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