Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 20, 2010
Patent Application Number
12119168
Date Filed
May 12, 2008
Patent Primary Examiner
Patent abstract
A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.
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