Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kyung Min Park0
Jae Won Han0
Date of Patent
March 23, 2010
0Patent Application Number
118491020
Date Filed
August 31, 2007
0Patent Primary Examiner
Patent abstract
A semiconductor device and a fabricating method thereof are provided. A PMD layer and at least one IMD layer are formed on a semiconductor substrate. A through-electrode penetrates through the PMD layer and the IMD layer, and a connecting electrode connects to the through-electrode.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.